Engineers develop novel method for resolving spin texture of topological surface states using transport measurements
(PHYSorg.com Physics)

The magnetoresistance effect is the tendency of a material to change the value of its electrical resistance in an externally-applied magnetic field. It has been widely applied in sensors and hard disk heads. So far, no link has been established between the existing magnetoresistance and spin texture of spin-polarised materials. Researchers from the National University of Singapore (NUS) have recently made a breakthrough in this field, revealing a close relation between the spin texture of topological surface states (TSS) and a new kind of magnetoresistance.