Engineering dream diodes with a graphene interlayer
(PHYSorg.com Nanotechnology)

A team of researchers, affiliated with UNIST has created a new technique that greatly enhances the performance of Schottky Diodes (metal-semiconductor junction) used in electronic devices. Their research findings have attracted considerable attention within the scientific community by solving the contact resistance problem of metal-semiconductor, which had remained unsolved for almost 50 years.