Hyperuniform disordered waveguides and devices for near infrared silicon photonics
(PHYSorg.com Physics)

In a new report published on Scientific Reports, Milan M. Milosevi´c and an international research team at the Zepler Institute for Photonics and Nanoelectronics, Etaphase Incorporated and the Departments of Chemistry, Physics and Astronomy, in the U.S. and the U.K. Introduced a hyperuniform-disordered platform to realize near-infrared (NIR) photonic devices to create, detect and manipulate light. They built the device on a silicon-on-insulator (SOI) platform to demonstrate the functionality of the structures in a flexible, silicon-integrated circuit unconstrained by crystalline symmetries. The scientists reported results for passive device elements, including waveguides and resonators seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. The hyperuniform-disordered platform improved compactness and enhanced energy efficiency as well as temperature stability, compared to silicon photonic devices fabricated on rib and strip waveguides.