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RSS FeedsECP® technology from AT&S enables evaluation of a fully integrated multilevel power converter on GaN basis
(World News Austria)

 
 

25 april 2017 11:24:37

 
ECP® technology from AT&S enables evaluation of a fully integrated multilevel power converter on GaN basis
(World News Austria)
 


Fraunhofer IAF developed monolithic multilevel voltage converter with high-volt GaN-on-Si technology - test setup with embedding power technology from AT&S demonstrates high performance of the circuit. Leoben, 25 April 2017 - Fraunhofer IAF has developed a fully integrated monolithic multilevel converter in high-volt AlGaN/GaN-on-Si technology. The integrated inverter circuit is designed for maximum voltages of +/- 400 V and currents of 5 A. The multilevel converter on an area of just 2 × 3 mm˛ comprises four transistors and six diodes. It...


 
25 viewsCategory: General > Europe > Austria
 
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